GaN based L-band high power and high efficiency pulsed transmitter

@article{Garg2015GaNBL,
  title={GaN based L-band high power and high efficiency pulsed transmitter},
  author={S. K. Garg and S. Aich and J. Dhar},
  journal={2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)},
  year={2015},
  pages={155-158}
}
This paper illustrates the design and development of L-Band GaN based high power, high efficiency pulsed transmitter to deliver peak output power of 50W at centre frequency of 1.25 GHz with 75 MHz bandwidth. This L-Band transmitter has been designed and developed for dual frequency (L&S-Band) airborne SAR mission. Size, weight and power constraints led to the selection of GaN HEMT devices which offer inherently higher efficiency compared to GaAsFET devices. Class-F approach has been used for… Expand

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