GaN-InN gann diodes characteristics in biharmonic mode

@article{Storozhenko2011GaNInNGD,
  title={GaN-InN gann diodes characteristics in biharmonic mode},
  author={I. P. Storozhenko and Yu. V. Arkusha and A. A. Piskun and Andriy Yaroshenko},
  journal={2011 21st International Crimean Conference "Microwave & Telecommunication Technology"},
  year={2011},
  pages={248-249}
}
The results of researches of power characteristics for Gunn-diode on the base of the alloy variband semiconductor GaN-InN with different active lengths in the biharmonic mode are presented. The influence of the region between GaN and InN length, cathodes contact and frequency on the diodes efficiency is studied. The possibility of efficient operation for… CONTINUE READING