GaN Heterodimensional Schottky Diode for THz Detection

@article{Veksler2006GaNHS,
  title={GaN Heterodimensional Schottky Diode for THz Detection},
  author={D. Veksler and Fr{\'e}d{\'e}ric Aniel and S. L. Rumyantsev and M. S. Shur and Nezih Pala and X. Hu and R.S.Q. Fareed and R. Gaska},
  journal={2006 5th IEEE Conference on Sensors},
  year={2006},
  pages={323-326}
}
The performance of conventional Schottky diodes used for detecting THz radiation is limited by the RC product. Heterodimensional diodes have a smaller capacitance and series resistance. In this paper, we present the first experimental demonstration of THz detection by AlGaN/GaN heterodimensional Schottky diodes (HDSD) that exhibited reasonable performance up to at least 2.24 THz.