GaN-HEMT VSWR Ruggedness and Amplifier Protection

@inproceedings{Bengtsson2010GaNHEMTVR,
  title={GaN-HEMT VSWR Ruggedness and Amplifier Protection},
  author={Olof Bengtsson and G. van der Bent and Matthias Rudolph and J. Wurfl and M. van Heijningen and F. E. van Vliet},
  year={2010}
}
  • Olof Bengtsson, G. van der Bent, +3 authors F. E. van Vliet
  • Published 2010
This paper presents the initial results in a study aimed at exploring the use of GaN-devices in applications where they are at risk of being exposed to high output voltage-standing-wave-ratio (VSWR) conditions. A measurement method developed to identify the limits of such stress is described together with the first results from measurements of novel FBH GaN-HEMT technology. Furthermore a circuit design aimed at preventing excessive operation under high output VSWR conditions is presented. The… CONTINUE READING