GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions

Abstract

We report the fabrication of GaN-based multiquantum well light-emitting diode (LED) with tunnel-junction (TJ)-cascaded active region. It was found from X-ray diffraction spectra that crystal quality of the TJ LED was almost identical to that of the conventional LED. Compared with the conventional LED, it was found that we could achieve 35% higher output… (More)

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