GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

@article{Hua2015GaNBasedMH,
  title={GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric},
  author={Mengyuan Hua and Cheng Qiang Liu and Shu Yang and Shenghou Liu and Kai Fu and Zhihua Dong and Yong Cai and Baoshun Zhang and Kevin J. Chen},
  journal={IEEE Electron Device Letters},
  year={2015},
  volume={36},
  pages={448-450}
}
In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiNx exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiNx, including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage. 
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