Corpus ID: 107503608

GaN Based Heterostructure Growth and Application to Electronic Devices and Gas Sensors.

@inproceedings{Cho2009GaNBH,
  title={GaN Based Heterostructure Growth and Application to Electronic Devices and Gas Sensors.},
  author={Eunjung Cho},
  year={2009}
}
  • Eunjung Cho
  • Published 2009
  • Materials Science
  • This thesis focuses on III-Nitrides for electronic and gas sensing devices. Systematic material growth optimization was performed by using various characterization techniques in order to improve device performance. For high frequency device operation, resistive bulk GaN is preferable to prevent parasitic leakage through the layer. Growth conditions for bulk GaN were optimized for this purpose using an in-house Metal Organic Vapor Phase Epitaxy system. The pinch-off current of AlGaN/GaN… CONTINUE READING

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