GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates

Abstract

Novel red light-emitting diodes (LEDs) based on GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure (DH) directly grown on [100] GaP substrates have been fabricated for the first time. The samples were grown by gas-source molecular beam epitaxy with an RF nitrogen radical beam source to incorporate N in GaP. Compared to conventional GaAs-based AlGaInP red… (More)

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