GaN/ZnO Nanotube Heterostructure Light-Emitting Diodes Fabricated on Si

Abstract

We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-μm-thick crack-free GaN/Si… (More)

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