GaInN light-emitting diodes with omni directional reflectors

@inproceedings{Gessmanna2003GaInNLD,
  title={GaInN light-emitting diodes with omni directional reflectors},
  author={Th. Gessmanna and Y.-L. Lia and E. Fred Schubert and J. W. Graffb and J. K. Sheuc},
  year={2003}
}
  • Th. Gessmanna, Y.-L. Lia, +2 authors J. K. Sheuc
  • Published 2003
A high-reflectivity omni directional reflector (ODR) has been incorporated into a GaInN lightemitting diode (LED) structure. The ODR comprises a transparent, electrically conductive quarterwave layer of indium tin oxide clad by silver and serves as an ohmic contact to p-type GaN. It is shown that ODR-LEDs have low optical losses and high extraction efficiency. Mesa-structure GaInN / GaN ODR-LEDs emitting in the blue wavelength range are demonstrated and compared to GaInN / GaN LEDs with… CONTINUE READING
Highly Cited
This paper has 25 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 14 extracted citations

High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces

IEEE Journal of Quantum Electronics • 2006
View 3 Excerpts
Highly Influenced

YAG and Quantum Dots Hybrid White Light-Emitting Diodes

2011 Symposium on Photonics and Optoelectronics (SOPO) • 2011

High Brightness GaN-Based Light-Emitting Diodes

Journal of Display Technology • 2007
View 2 Excerpts

References

Publications referenced by this paper.
Showing 1-10 of 15 references

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

G. Kipshidze, V. Kuryatov, +3 authors H. Temkin
Appl. Phys. Lett. 80, 3682 • 2002

AlGaN-GaN UV lightemitting-diodes grown on SiC by metal-organic chemical vapor deposition

T. G. Zhu, J. C. Denyszyn, U. Chowdhury, M. M. Wong, R. D. Dupuis
IEEE Journal on selected topics in quantum electronics 8, 298 • 2002

Illumination with solid-state lighting technology

D. A. Steigerwald, J. C. Bhat, +5 authors S. L. Rudaz
IEEE Journal on selected topics in quantum electronics 8, No. 2, 310 • 2002

and R

S. Illek, U. Jacob, +3 authors W. Wegleiter
Wirth “Buried microreflectors boost performance of AlGaInP LED’s”, Compound Semiconductor January/February, 1 • 2002

A study of indium tin oxide (ITO) contacts to p-GaN

D. W. Kim, Y. J. Sung, J. W. Park, G. Y. Yeom
Thin Solid Films 398-399, 87 • 2001

High - power AlGaInN flipchip light - emitting diodes ”

J. J. O’Shea, M. J. Ludowise, +8 authors S. A. Stockman
Appl . Phys . Lett . • 2001

High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy

S. Fernandez, F. B. Naranjo, +5 authors K. H. Ploog
Appl. Phys. Lett. 79, 2136 • 2001

J

J. J. Wierer, D. A. Steigerwald, M. R. Krames
J. O’Shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Goetz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes”, Appl. Phys. Lett. 78, 3379 • 2001

Lien

R. H. Horng, D. S. Wuu, Y. Ch
W. H. Lan, “Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN”, Appl. Phys. Lett. 79, 2925 • 2001

Similar Papers

Loading similar papers…