• Published 2018

GaInAsP / InP Membrane Lasers for On-chip Applications ( Invited paper )

@inproceedings{Amemiya2018GaInAsPI,
  title={GaInAsP / InP Membrane Lasers for On-chip Applications ( Invited paper )},
  author={Tomohiro Amemiya and Daisuke Inoue and Takuo Hiratani and Takahiro Tomiyasu and Tatsuya Uryu and Nagisa Nakamura and Nobuhiko Nishiyama and Shigehisa Arai},
  year={2018}
}
Toward the practical use of on-chip optical interconnection in LSIs, we developed an ultralow-power DR laser made in an InP-based membrane on a silicon substrate. The device showed a low threshold current of 0.21 mA, a high differential quantum efficiency of 32 %, and a maximum light output of 0.5 mW. Demonstration of data transmission confirmed a small energy cost of 93 fJ/bit at 20 Gbps operation. 

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References

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