GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects

@article{Zolper1994GaAsSbbasedHT,
  title={GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects},
  author={J. C. Zolper and J. Klem and T. A. Plut and C. Tigges},
  journal={Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)},
  year={1994},
  volume={2},
  pages={1843-1846 vol.2}
}
  • J. C. Zolper, J. Klem, +1 author C. Tigges
  • Published 1994
  • Materials Science
  • Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
  • We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced… CONTINUE READING
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