GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects

@article{Zolper1994GaAsSbbasedHT,
  title={GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects},
  author={John C. Zolper and John F. Klem and Thomas A. Plut and C. P. Tigges},
  journal={Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)},
  year={1994},
  volume={2},
  pages={1843-1846 vol.2}
}
  • J. ZolperJ. Klem C. Tigges
  • Published 5 December 1994
  • Physics
  • Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced… 

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References

SHOWING 1-7 OF 7 REFERENCES

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application

A p+‐AlGaAs/n+‐GaInP heterojunction tunnel diode with band gap Eg≊1.9 eV was fabricated by the atomic layer epitaxy growth. Doping levels of 1×1020 cm−3 and 5×1019 cm−3 were achieved in the p and n

GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells

The growth and characterization of tunneling GaAs homojunctions and GaAs‐AlGaAs heterojunctions by molecular beam epitaxy for use as optically transparent interconnects in GaAs and AlGaAs solar cells

High current density carbon-doped strained-layer GaAs (p+)-InGaAs(n+)-GaAs(n+) p-n tunnel diodes

Data are presented showing that a GaAs p‐n tunnel diode can be modified, and improved, with the introduction of an InxGa1−xAs layer (Lz∼100 A) in the barrier region to reduce the energy gap (and

GaAs tunnel junction grown by metalorganic vapor‐phase epitaxy for multigap cascade solar cells

GaAs tunnel p‐n junctions with peak current densities up to 45 A cm−2 were grown by metallorganic vapor‐phase epitaxy. These tunnel diodes are suitable for intercell ohmic contacts between the case

Over 35-percent efficient GaAs/GaSb tandem solar cells

The efficiency of GaAs solar cells can be substantially increased by locating an infrared-sensitive booster solar cell behind a transparent GaAs cell. Infrared-sensitive GaSb cells and