GaAs heteroepitaxial growth on Si substrates with thin Si interlayers in situ annealed at high temperatures

@inproceedings{Yodo1995GaAsHG,
  title={GaAs heteroepitaxial growth on Si substrates with thin Si interlayers in situ annealed at high temperatures},
  author={Tokuo Yodo and Masayasu Tamura},
  year={1995}
}
The structural quality of GaAs/Si films can be improved by incorporating a Si interlayer. In this paper, we discuss the effect on the GaAs structural quality of a high‐temperature anneal, either in situ between the deposition of the Si layer and subsequent GaAs, or ex situ after the film has been fully grown. The Si interlayer has been found to act as both a cap layer for an in situ high‐temperature anneal and a blocking layer of dislocations. The full width at half maximum (FWHM) of the x‐ray… CONTINUE READING