GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

Abstract

Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.

DOI: 10.1021/nl102988w

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@article{Chuang2011GaAsbasedNL, title={GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.}, author={Linus C. Chuang and Forrest Grant Sedgwick and Roger R. Chen and Wai Son Ko and Michael James Moewe and Kar Wei Ng and Thai-Truong D. Tran and Connie J Chang-Hasnain}, journal={Nano letters}, year={2011}, volume={11 2}, pages={385-90} }