GaAs TUNNETT diodes oscillating at 430-655 GHz in CW fundamental mode

@article{Nishizawa2005GaAsTD,
  title={GaAs TUNNETT diodes oscillating at 430-655 GHz in CW fundamental mode},
  author={Jun-ichi Nishizawa and Piotr Plotka and Hidefumi Makabe and Toru Kurabayashi},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2005},
  volume={15},
  pages={597-599}
}
GaAs TUNNET diodes with 75-nm thick undoped transit-time layer and 14-nm thick n/sup +/ electric-field-inducing layer were fabricated with molecular layer epitaxy. They were oscillating in fundamental-mode metal rectangular resonant cavities of WR-1.5 (0.381 /spl times/ 0.191 mm) and WR-1.2 (0.305 /spl times/ 0.152 mm) types. Continuous wave generation of -53 dBm to -49 dBm, in the frequency range of 430-510GHz, at the bias current from 500 to 560 mA was obtained in the WR-1.5 cavity. In the WR… CONTINUE READING

Figures and Topics from this paper.

Citations

Publications citing this paper.
SHOWING 1-2 OF 2 CITATIONS

Similar Papers

Loading similar papers…