GaAs Power HBT: COOL Device With HOT Performance

  • Fazal Ali
  • Published 1995 in IEEE Princeton Section Sarnoff Symposium
AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) designed for microwave power applicatims have shown marked improvements in output power and power-added efficiency (PAE) during recent years. This paper provides a synopsis of the design considerations for high efficiency, GaAs HBT unit-cell and power amplifiers. Performance results of several high… CONTINUE READING