GaAs FET with a high mobility self-assembled planar nanowire channel on a (100) substrate

@article{Fortuna2009GaAsFW,
  title={GaAs FET with a high mobility self-assembled planar nanowire channel on a (100) substrate},
  author={Seth A. Fortuna and Xiuling Li},
  journal={2009 Device Research Conference},
  year={2009},
  pages={19-20}
}
We demonstrate for the first time, a metal-semiconductor field-effect transistor (MESFET) fabricated with a self-assembled and high mobility <110> GaAs planar nanowire (NW) channel. The planar NWs were grown on GaAs (100) substrates with metalorganic chemical vapor deposition (MOCVD) through gold (Au) catalyzed vapor-liquid-solid (VLS) mechanism [1]. Unlike conventional out-of-plane <111> NWs, these <110> planar NWs grow self-aligned in the [0–11] or [01–1] directions laterally and epitaxially… CONTINUE READING

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