GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

@inproceedings{Adachi1985GaAsAA,
  title={GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications},
  author={Sadao Adachi},
  year={1985}
}
The Al x Ga1−x As/GaAs heterostructure system is potentially useful material for high‐speed digital, high‐frequency microwave, and electro‐optic device applications. Even though the basic Al x Ga1−x As/GaAs heterostructure concepts are understood at this time, some practical device parameters in this system have been hampered by a lack of definite knowledge of many material parameters. Recently, Blakemore has presented numerical and graphical information about many of the physical and… CONTINUE READING

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