GRAIN BOUNDARY DIFFUSION IN POLYCRYSTALLINE SILICON FILMS ON SiO2

Abstract

The enhanced grain boundary diffusion in cw laser processed LPCVD polycrystalline silicon films on insulating SiC>2 has been investigated and the grain boundary diffusion coefficient D' for Phosphorus has been determined. Mesa diodes were fabricated in the large grain poly-Si films by standard photolithographic and etching methods and subsequent ion… (More)

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