• DOI:10.1063/1.124092
Corpus ID: 12618745

GHz bandwidth GaAs light-emitting diodes

@article{Chen1999GHzBG,
  title={GHz bandwidth GaAs light-emitting diodes},
  author={C. Chen and M. Hargis and J. Woodall and M. Melloch and J. Reynolds and E. Yablonovitch and W. Wang},
  journal={Applied Physics Letters},
  year={1999},
  volume={74},
  pages={3140-3142}
}

• C. Chen, M. Hargis, +4 authors W. Wang
• Published 1999
• Materials Science
• Applied Physics Letters

Double-heterostructure GaAs/GaAlAs light-emitting diodes (LEDs) have been fabricated with the emitter regions beryllium doped to 2×1019 and 7×1019 cm−3. The 7×1019 cm−3 doped emitters have an internal quantum efficiency of 10% and an optical modulation bandwidth of 1.7 GHz. The steady-state optical output power versus the input current shows an external efficiency of 2.5 μW/mA. The 2×1019 cm−3 emitters have internal quantum efficiencies as high as 80%, but a reduced cutoff frequency. The… Expand

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