• Corpus ID: 34543001


  author={Sergey I. Stepanov and V. I. Nikolaev and Vladislav E. Bougrov and Alexey E. Romanov},
Gallium oxide has attracted a considerable interest as a functional material for various applications. This review summarizes the research work carried out in the field of gallium oxide. Polymorphism, crystal structure, band-structure, optical and electrical properties are discussed. Various methods to produce Ga 2 O 3 thin films, nanostructures and bulk crystals are covered. A special focus is given on potential applications of monoclinic polymorph � -Ga 2 O 3 . Finally, future perspectives of… 

Figures and Tables from this paper

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper

Chapter 2 Ga 2 O 3 Nanowire Synthesis and Device Applications

In recent years, gallium oxide nanowires have been used in many scientific disciplines due to their outstanding and unique properties. Several applications have focused on incorporating gallium oxide

Influence of the Nanostructure of Gallium Oxide Catalysts on Conversion in the Green Synthesis of Carbamates

The nanostructure of β-gallium oxide crystals influences the conversion to carbamates; specifically, for the synthesis of alkyl carbamates (like propyl N-octylcarbamate) from CO2 and n-propanol in

A simple and fast method for the fabrication of p-type β-Ga2O3 by electrochemical oxidation method with DFT interpretation

In this work, a simple electrochemical oxidation method has been used to prepare p-type β-Ga2O3 nanoparticles. This method overcomes the problem of doping high energy gap semiconductors to form

Impact of erbium (Er) doping in structural, optical and electrical properties of Ga2O3 nanostructures/Si heterojunction

In the current study, we report the growth of rare earth Er-doped Ga2O3 nanostructures on Ga2O3- seeded Si substrate by employing chemical bath deposition (CBD) and RF magnetron sputtering

A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism

As a wide-bandgap semiconductor (WBG), β-Ga2O3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga2O3 single crystals were summarized,

Impact of deposition temperature on crystalline quality, oxygen vacancy, defect modulations and hetero-interfacial properties of RF sputtered deposited Ga2O3 thin films on Si substrate

In the current work, thin film (∼55 nm) of n-type Ga2O3 (n-Ga2O3) is deposited on silicon (p-Si) substrate by using radio-frequency (RF) sputtering technique with systematic substrate temperature

A comparative study of wet etching and contacts on ð 201 Þ and ( 010 ) oriented bGa 2 O 3

We report on the effect of b-Ga2O3 crystal orientation on wet etching and Ohmic contact formation. The photochemical etching rate in KOH solutions of ð201Þ oriented, n-type bulk single crystals grown

High-pressure optical and vibrational properties of Ga 2 O 3 nanocrystals

1 Abstract—In this project the optical and vibrational properties of monoclinic gallium oxide (β-Ga2O3) nanocrystals (NCs) are studied by Raman scattering spectroscopy under highhydrostatic pressure

Light-driven permanent transition from insulator to conductor

The transition from insulator to conductor can be achieved in some materials but requires modification of both the arrangement of atoms and their electronic configurations. This is often achieved by



Oxygen vacancies and donor impurities in β-Ga2O3

Using hybrid functionals we have investigated the role of oxygen vacancies and various impurities in the electrical and optical properties of the transparent conducting oxide β-Ga2O3. We find that

Brillouin zone and band structure of β‐Ga2O3

Gallium oxide is increasingly used in a variety of applications, but confusion reigns over the Brillouin zone and the band structure of monoclinic β‐Ga2O3. We present a detailed study of the shape of

First-principles study of the structural, electronic, and optical properties of Ga 2 O 3 in its monoclinic and hexagonal phases

We report the results of a comprehensive study on the structural, electronic, and optical properties of Ga2O3 in its ambient, monoclinic and high-pressure, hexagonal phases in the framework of

MrbeTBJ [ T heTTaWJPT Tbf [

  • Appl . Phys . Express
  • 2013