Future Semiconductor Devices for Multi-Valued Logic Circuit Design

@inproceedings{Karmakar2013FutureSD,
  title={Future Semiconductor Devices for Multi-Valued Logic Circuit Design},
  author={Supriya Karmakar and Faquir C. Jain},
  year={2013}
}
This paper introduces future devices for multi-valued logic implementation. Quantum dot gate field effect transistor (QDGFET) works based on the change in threshold voltage due to stored charge in the quantum dots in the gate region. Quantum dot channel field effect transistor (QDCFET) produces more number of states in their transfer characteristics because of charge flow through the mini-band structure formed by the overlapping energy bands of the neighboring quantum dots in the channel region… CONTINUE READING
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Spatial Wavefunction Switched (SWS) InGaAs FETs with II-VI Gate Insulators

  • F. C. Jain, B. Miller, +5 authors E. Heller
  • Journal of Electronic Materials, Vol. 40, No. 8…
  • 2011
Highly Influential
13 Excerpts

Application of 25 nm Quantum Dot Gate FETs to the Design of ADC and DAC Circuits

  • S. Karmakar, J. A. Chandy, F. C. Jain
  • International Journal of High Speed Electronics…
  • 2011
1 Excerpt

Multi-State Quantum Dot Channel (QDC) Field-Effect Transistors (FETs): A New Paradigm in Circuit Design

  • F. Jain, S. Karmakar, +4 authors E. Heller
  • 2011 Nanoelectronic Devices for Security…
  • 2011
1 Excerpt

Quantum Dot Gate Three State FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

  • S. Karmakar, E. Suarez, F. Jain
  • Journal of Electronic Materials, Vol. 40, No. 8…
  • 2011
2 Excerpts

3-State Behavior of Quantum Dot Gate FETs with Lattice Matched Insulator

  • S. Karmakar, M. Gogna, +4 authors F. Jain
  • Proceedings of 2009 Nanoelectronic Devices for…
  • 2009
1 Excerpt

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