Corpus ID: 1263832

Fundamentals of Gallium Nitride Power Transistors

@inproceedings{Colino2013FundamentalsOG,
  title={Fundamentals of Gallium Nitride Power Transistors},
  author={Stephen L. Colino and R. A. Beach},
  year={2013}
}
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | | 1 Structure A device’s cost effectiveness starts with leveraging existing production infrastructure. EPC’s process begins with silicon wafers. Utiilizing existing silicon processing equipment, a thin layer of Aluminum Nitride (AlN) is grown on the Silicon to isolate the device structure from the Substrate. The isolation layer for 200 V and below devices is 300 V. On top of this, a thick layer of highly resistive Gallium… Expand

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