Fundamentals of Gallium Nitride Power Transistors

@inproceedings{Colino2013FundamentalsOG,
  title={Fundamentals of Gallium Nitride Power Transistors},
  author={Stephen L. Colino and Robert A. Beach},
  year={2013}
}
Structure A device’s cost effectiveness starts with leveraging existing production infrastructure. EPC’s process begins with silicon wafers. Utiilizing existing silicon processing equipment, a thin layer of Aluminum Nitride (AlN) is grown on the Silicon to isolate the device structure from the Substrate. The isolation layer for 200 V and below devices is 300 V. On top of this, a thick layer of highly resistive Gallium Nitride is grown. This layer provides a foundation on which to build the GaN… CONTINUE READING
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