Corpus ID: 118042002

Fundamental Issues and Problems in the Realization of Memristors

@article{Meuffels2012FundamentalIA,
  title={Fundamental Issues and Problems in the Realization of Memristors},
  author={P. M. Meuffels and Rohit Soni},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2012}
}
In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film containing a region which is highly self-doped with oxygen vacancies and a region which is less doped, i.e., a single-phase material with a built-in chemical inhomogeneity sandwiched between two platinum electrodes. On base of the proposed model, Strukov et al. [1] were able to obtain the characteristic… Expand
The physical and circuit-theoretic significance of the Memristor : Full version
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The present opinion is that the framework of basic circuit theory and its connection with applications should be logically expanded in order to naturally include the new element, the memristor. Expand
The Memory-Conservation Theory of Memristance
  • E. Gale
  • Physics, Computer Science
  • 2014 UKSim-AMSS 16th International Conference on Computer Modelling and Simulation
  • 2014
TLDR
It is shown that by modelling the magneto statics of the memory-holding ionic current (oxygen vacancies in the Strukov memristor), the Memristor's magnetic flux can be identified as the flux arising from the ions. Expand
Parametric analysis of memristive switching mechanism
With the Moore's law drawing in a saturation limit closer for our current technologies in the semiconductor field, the need for efficient technologies better than the present majorly in terms ofExpand
Hybrid dynamical systems for memristor modelling an approach avoiding the terminal-state problem
  • J. Haase, André Lange
  • Computer Science
  • Proceedings of the 2013 Forum on specification and Design Languages (FDL)
  • 2013
TLDR
A straightforward solution for the restricted range of internal state variables of memristive nanoelectronic devices within the framework of hybrid dynamical systems is presented. Expand
Memristor Equations: Incomplete Physics and Undefined Passivity/Activity
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It is shown that the memristor equations are physically incomplete regarding the problem of passivity/activity, and the claim that the present Memristor functions describe a passive device lead to unphysical results, such as violating the Second Law of thermodynamics, in infinitely large number of cases. Expand
Hybrid Dynamical Systems for Memristor Modelling
TLDR
This section presents a straightforward solution for the restricted range of internal state variables of memristive nanoelectronic devices within the framework of hybrid dynamical systems. Expand
Quasi-Linear Vacancy Dynamics Modeling and Circuit Analysis of the Bipolar Memristor
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The model describes known memristor dynamics even as it generates new insight about vacancy migration, bottlenecks to switching speed and elucidates subtle relationships between switching resistance range and device parameters. Expand
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TLDR
It is shown on both a theoretical and an experimental level that nanoionic-type memristive elements are inherently controlled by non-equilibrium states resulting in a nanobattery. Expand
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Material independent memory effect is all prevalent in the nature because of the dynamical properties of electrons and ions. These perturbations are responsible for generating and evolving to newExpand
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References

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The Memory-Conservation Theory of Memristance
  • E. Gale
  • Physics, Computer Science
  • 2014 UKSim-AMSS 16th International Conference on Computer Modelling and Simulation
  • 2014
TLDR
It is shown that by modelling the magneto statics of the memory-holding ionic current (oxygen vacancies in the Strukov memristor), the Memristor's magnetic flux can be identified as the flux arising from the ions. Expand
The Missing Memristor: Novel Nanotechnology or rather new Case Study for the Philosophy and Sociology of Science?
In 2008, it was widely announced that the missing memristor, a basic two-terminal electrical circuit element, had finally been discovered. The memristor is the fourth and last such circuit elementExpand
Memresistors and non-memristive zero-crossing hysteresis curves
It has been erroneously asserted by the circuit theorist Leon Chua that all zero-crossing pinched hysteresis curves define memristors. This claim has been used by Stan Williams of HPLabs to assertExpand
Pinched Hysteresis Loops is the Fingerprint of Memristive Devices
This short note clarifies that the "pinched hysteresis loop" fingerprint of a memristor, or a memristive device, must hold for all amplitudes, for all frequencies, and for all initial conditions, ofExpand
Physical Chemistry of Ionic Materials: Ions and Electrons in Solids
Preface. 1. Introduction. Motivation. The defect concept: Point defects as the main actors. 2. Bonding aspects: From atoms to solid state. Chemical bonding in simple molecules. Many atoms in contact:Expand