Fully transparent thin-film transistor devices based on SnO2 nanowires.
@article{Dattoli2007FullyTT,
title={Fully transparent thin-film transistor devices based on SnO2 nanowires.},
author={Eric N. Dattoli and Qing Cui Wan and Wei Guo and Yanbin Chen and Xiaoqing Pan and Wei Lu},
journal={Nano letters},
year={2007},
volume={7 8},
pages={
2463-9
}
}We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field…
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