Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology

@article{Mohamad2015FullFA,
  title={Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology},
  author={Blend Mohamad and G{\'e}rard Ghibaudo and Charles Leroux and Emmanuel Josse and Gilles Reimbold},
  journal={2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)},
  year={2015},
  pages={1-3}
}
In this paper, a full front and back split C-V characterization of FDSOI devices and associated methodology to accurately extract the EOT (Equivalent oxide thickness) of the front and back (BOX) oxide as well as the channel thickness are presented for the first time.