Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

Abstract

Physics-based simulations are widely recognized as an helpful support to develop novel transistor structures. In this paper we describe a two-dimensional full-band and atomistic simulator. The sp<sup>3</sup>d<sup>5</sup>s* tight-binding model is used as bandstructure model. Our tool allows the treatment of realistically extended n- and p-doped double-gate… (More)

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Cite this paper

@article{Luisier2008FullbandAA, title={Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node}, author={M. Luisier and Gerhard Klimeck}, journal={2008 International Conference on Simulation of Semiconductor Processes and Devices}, year={2008}, pages={17-20} }