From Si nanowires to porous silicon: the role of excitonic effects.

@article{Bruno2007FromSN,
  title={From Si nanowires to porous silicon: the role of excitonic effects.},
  author={Mauro Bruno and Maurizia Palummo and Andrea Marini and Rodolfo Del Sole and Stefano Ossicini},
  journal={Physical review letters},
  year={2007},
  volume={98 3},
  pages={
          036807
        }
}
We show that the electronic and optical properties of silicon nanowires, with different size and orientation, are dominated by important many-body effects. The electronic and excitonic gaps, calculated within first principles, agree with the available experimental data. Huge excitonic effects, which depend strongly on wire orientation and size, characterize the optical spectra. Modeling porous silicon as a collection of interacting nanowires, we find an absorption spectrum which is in very good… 
View on PubMed
fisica.uniroma2.it
116 Citations
Highly Influential Citations
2
Background Citations
8
Methods Citations
2
Results Citations
4

Figures from this paper

116 Citations

Excitonic effects in the optical properties of CdSe nanowires

Using a first-principle approach beyond density functional theory we calculate the electronic and optical properties of small diameter CdSe nanowires. Our results demonstrate how some approximations…

Many‐body effects on the electronic and optical properties of Si nanowires from ab initio approaches

The study of semiconducting nanowires is one of the most rapidly growing research areas in materials science and nanotechnology, not only from the point of view of the possible applications, but also…

Fine structure and selection rules for excitonic transitions in silicon nanostructures

The excitonic fine structure, including splitting due to direct and exchange interactions, has experimentally been resolved from silicon nanocrystals and from silicon nanorods. We have found the…

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase.

Results from ab initio calculations for undoped and doped Si nanocrystals and nanowires are discussed, showing how theory can aid and improve comprehension of the structural, electronic and optical properties of these systems.

Exploring Direct to Indirect Bandgap Transition in Silicon Nanowires: Size Effect

We have investigated the electronic band structure of [110] silicon nanowires (SiNWs) using first-principles calculations. We find that, in the ultrathin diameter regime, SiNWs have a direct bandgap,…

Networks of silicon nanowires: a large-scale atomistic electronic structure analysis

Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential…

Electronic properties and dielectric response of surfaces and nanowires of silicon from ab-initio approaches

Electronic and Optical Properties of Nanoporous Silicon for Solar-Cell Applications

Bulk silicon is a poor light emitter and absorber, but its optical properties are significantly enhanced by nanostructuring. We use first-principles calculations to investigate the electronic and…

Band structure analysis in SiGe nanowires

Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions.

It is shown that hexagonal-diamond NWs are characterized by a more pronounced quantum confinement effect than cubic-d diamond NWs, and the study of the homojunctions reveals that the diameter has a crucial effect on the band alignment at the interface.
...

References

SHOWING 1-10 OF 12 REFERENCES

Optical properties of low dimensional silicon structures

Preface. Microporous silicon: formation mechanism and preparation method V. Lehmann. Electrochemical and chemical behaviour of porous silicon layers: the role of the material wettability and its high…

First-principles computation of material properties: the ABINIT software project

Comput. Mater. Sci.

Phys. Rev. B Comput. Phys. Commun

  • Phys. Rev. B Comput. Phys. Commun
  • 1989

Rep. Prog. Phys

  • Rep. Prog. Phys
  • 1998

The main effect we observe, moving from isolated Si-NWs to PS, is the suppression of the depolarization effect, which should depend mostly on the density and not on the actual structures

  • The main effect we observe, moving from isolated Si-NWs to PS, is the suppression of the depolarization effect, which should depend mostly on the density and not on the actual structures

and references therein

  • and references therein
  • 2006

the SELF software project

  • the SELF software project

Appl. Phys. Lett

  • Appl. Phys. Lett
  • 1993

Phys. Rev. Lett

  • Phys. Rev. Lett
  • 1992