Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate

  title={Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate},
  author={L. Dillner and W. Strupiński and S. Hollung and C. Mann and J. Stake and M. Beardsley and E. Kollberg},
  journal={IEEE Electron Device Letters},
We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 /spl mu/A//spl mu/m/sup 2/ at 19 V. The maximum capacitance is 0.54 fF//spl mu/m/sup 2/. In a frequency tripler experiment a maximum output power of 7.1… Expand
29 Citations

Figures and Tables from this paper

InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate
  • 13
  • PDF
Characteristics of Al/sub 0.4/Ga/sub 0.6/N/GaN heterostructure varactor diodes
Heterostructure Barrier Varactor Multipliers
  • 5
  • PDF
Heterostructure Barrier Varactor Quintuplers for Terahertz Applications
  • 10
Subharmonically Pumped Millimeter-Wave Upconverters Based on Heterostructure Barrier Varactors
  • 11


Effects of self-heating on planar heterostructure barrier varactor diodes
  • 74
  • PDF
High performance InP-based heterostructure barrier varactors in single and stack configuration
  • 31
  • Highly Influential
Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers
  • 13
5-mW and 5% efficiency 216-GHz InP-based heterostructure barrier varactor tripler
  • 38
Heterostructure barrier varactors on copper substrate
  • 12
Record performance of a 250 GHz InP-based heterostructure barrier varactor tripler
  • 27
Single‐crystal thin film InP: Fabrication and absorption measurements
  • 26
Millimeter- and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodes
  • 94