Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate

@article{Dillner2000FrequencyMM,
  title={Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate},
  author={L. Dillner and W. Strupiński and S. Hollung and C. Mann and J. Stake and M. Beardsley and E. Kollberg},
  journal={IEEE Electron Device Letters},
  year={2000},
  volume={21},
  pages={206-208}
}
We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 /spl mu/A//spl mu/m/sup 2/ at 19 V. The maximum capacitance is 0.54 fF//spl mu/m/sup 2/. In a frequency tripler experiment a maximum output power of 7.1… Expand
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