Frequency Variation of the Small-Signal Output Conductance of Decananometer MOSFETs Due to Substrate Crosstalk

Abstract

Frequency variation of the output conductance in advanced fully depleted SOI and multiple-gate MOSFETs related to the electrical coupling between drain and Si substrate underneath the buried oxide (BOX) is analyzed through measurements and 2-D simulations. A low-frequency (LF) conductance variation in these devices, which could be erroneously attributed to… (More)

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