Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy

@inproceedings{Bhunia2004FreestandingAV,
  title={Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy},
  author={Sunandan Bhunia and Tomoaki Kawamura and Seiji Fujikawa and Kenshi Tokushima and Yoshio Watanabe},
  year={2004}
}
Abstract Metalorganic vapor phase epitaxial technique has been used to grow surface mounted vertical and uniform cross-sectional InP nanowires on a wafer scale basis. The growth was carried out under the vapor–liquid–solid mechanism using Au colloidal nanoparticles of nominal diameters of 10 and 20 nm , and their properties were compared. The effect of the pre-growth anneals and growth temperatures on the stability of the nanowires were studied in detail. Scanning electron microscopy and… CONTINUE READING