Free-carrier absorption in n-type piezoelectric semiconductor films

@article{Wu1994FreecarrierAI,
  title={Free-carrier absorption in n-type piezoelectric semiconductor films},
  author={C. Wu and Chau-Jy Lin},
  journal={Journal of Physics: Condensed Matter},
  year={1994},
  volume={6},
  pages={10147-10158}
}
Free-carrier absorption in n-type GaAs films has been investigated for the case where the free carriers are confined in a quasi-two-dimensional semiconducting structure with a non-parabolic energy band of electrons. It is assumed that the carriers in semiconductors are scattered by acoustic phonons via firstly the deformation-potential coupling and secondly the piezoelectric coupling. Results show that the free-carrier absorption coefficient depends upon the polarization of the electromagnetic… Expand
9 Citations

Figures from this paper

References

SHOWING 1-10 OF 21 REFERENCES
Quantum-well heterostructure lasers
  • 446
...
1
2
3
...