Fractal structures for low-resistance large area AlGaN/GaN power transistors
@article{Reiner2012FractalSF, title={Fractal structures for low-resistance large area AlGaN/GaN power transistors}, author={Richard Reiner and Patrick Waltereit and Fouad Benkhelifa and S. Muller and S. M{\"u}ller and Herbert Dr Walcher and Sandrine Wagner and R{\"u}diger Quay and Michael Schlechtweg and Oliver Ambacher}, journal={2012 24th International Symposium on Power Semiconductor Devices and ICs}, year={2012}, pages={341-344} }
This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of VBR >; 700V and on-state currents of ID = 40A at VGS = 1V.
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