Fractal structures for low-resistance large area AlGaN/GaN power transistors

@article{Reiner2012FractalSF,
  title={Fractal structures for low-resistance large area AlGaN/GaN power transistors},
  author={Richard Reiner and Patrick Waltereit and Fouad Benkhelifa and S. Muller and S. M{\"u}ller and Herbert Dr Walcher and Sandrine Wagner and R{\"u}diger Quay and Michael Schlechtweg and Oliver Ambacher},
  journal={2012 24th International Symposium on Power Semiconductor Devices and ICs},
  year={2012},
  pages={341-344}
}
This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of VBR >; 700V and on-state currents of ID = 40A at VGS = 1V. 
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13 Citations
Background Citations
3
Methods Citations
1

13 Citations

Dimension effect in a linear model of a Ka-band GaN HEMT
It is shown that electrophysical property fractality (for example, ρ=ρ(l,d)) of a heteroepitaxial AlGaN/GaN structure with two-dimensional electron gas has a strong influence on field effect…
Techniques towards GaN power transistors with improved high voltage dynamic switching properties
Dynamic switching limitations of GaN power devices are analyzed and techniques towards improving fast high voltage switching are proposed and verified experimentally with an emphasis on optimized…
The Influence of AlGaN/GaN Heteroepitaxial Structure Fractal Geometry on Size Effects in Microwave Characteristics of AlGaN/GaN HEMTs
TLDR
The approach proposed in the work gives an opportunity, not only to predict the size of the structural elements of the transistor with the desired characteristics, but also to reconstruct its compact model parameters, which significantly speeds up the development and optimization of the HEMTs with the wanted device characteristics.
GaN HEMTs and MMICs for space applications
We report on recent results from our GaN transistor and circuit technology. Epitaxial growth can be performed on either SiC or Si substrates in order to provide high-quality AlGaN/GaN…
Physical model for GaN HEMT design optimization in high frequency switching applications
TLDR
In this work, extrinsic model for Id (Vds, Vgs) output characteristics of a depletion mode GaN HEMT with a field plate structure was obtained, as well as physical model for input, output and reverse capacitance in the subthreshold regime.
Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application
In this paper, physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry,…
Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices
This paper gives a detailed analysis on the assembly and packaging technologies for the state-of-the-art GaN-based high-electron-mobility transistors, which are suitable for high-temperature and…
RF Performance of Ultra-wide Bandgap HEMTs
In the current scenario of high-speed electronics technology, many application areas—broadband Internet access, fifth-generation (4G/5G) mobile systems, and cutting-edge military applications—are…
Confinement of wave-function in Fractal geometry, a detection using DFT.
Fractals are self-repeating patterns which have dimensions given by fractions rather than integers. While the dimension of a system unambiguously defines its properties, a fractional dimensional…
N ov 2 01 9 Confinement of wavefunction in Fractal geometry , a detection using DFT
Fractals are self-repeating patterns which have dimensions given by fractions rather than integers. While the dimension of a system unambiguously defines its properties, a fractional dimensional…
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