Fractal structures for low-resistance large area AlGaN/GaN power transistors

@article{Reiner2012FractalSF,
  title={Fractal structures for low-resistance large area AlGaN/GaN power transistors},
  author={Richard Reiner and Patrick Waltereit and Fouad Benkhelifa and S. Muller and S. M{\"u}ller and Herbert Dr Walcher and Sandrine Wagner and R{\"u}diger Quay and Michael Schlechtweg and Oliver Ambacher},
  journal={2012 24th International Symposium on Power Semiconductor Devices and ICs},
  year={2012},
  pages={341-344}
}
This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of VBR >; 700V and on-state currents of ID = 40A at VGS = 1V. 

Dimension effect in a linear model of a Ka-band GaN HEMT

It is shown that electrophysical property fractality (for example, ρ=ρ(l,d)) of a heteroepitaxial AlGaN/GaN structure with two-dimensional electron gas has a strong influence on field effect

Techniques towards GaN power transistors with improved high voltage dynamic switching properties

Dynamic switching limitations of GaN power devices are analyzed and techniques towards improving fast high voltage switching are proposed and verified experimentally with an emphasis on optimized

The Influence of AlGaN/GaN Heteroepitaxial Structure Fractal Geometry on Size Effects in Microwave Characteristics of AlGaN/GaN HEMTs

TLDR
The approach proposed in the work gives an opportunity, not only to predict the size of the structural elements of the transistor with the desired characteristics, but also to reconstruct its compact model parameters, which significantly speeds up the development and optimization of the HEMTs with the wanted device characteristics.

GaN HEMTs and MMICs for space applications

We report on recent results from our GaN transistor and circuit technology. Epitaxial growth can be performed on either SiC or Si substrates in order to provide high-quality AlGaN/GaN

Physical model for GaN HEMT design optimization in high frequency switching applications

TLDR
In this work, extrinsic model for Id (Vds, Vgs) output characteristics of a depletion mode GaN HEMT with a field plate structure was obtained, as well as physical model for input, output and reverse capacitance in the subthreshold regime.

Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application

In this paper, physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry,

Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices

This paper gives a detailed analysis on the assembly and packaging technologies for the state-of-the-art GaN-based high-electron-mobility transistors, which are suitable for high-temperature and

RF Performance of Ultra-wide Bandgap HEMTs

In the current scenario of high-speed electronics technology, many application areas—broadband Internet access, fifth-generation (4G/5G) mobile systems, and cutting-edge military applications—are

Living Trees and Networks: An Exploration of Fractal Ontology and Digital Archiving of Indigenous Knowledge

LIVING TREES AND NETWORKS: AN EXPLORATION OF FRACTAL ONTOLOGY AND DIGITAL ARCHIVING OF INDIGENOUS KNOWLEDGE Chelsea Bourget Advisors: University of Guelph, 2020 Amanda Boetzkes Brittany Luby Dominic

Topics in environmental and physical geodesy

A compilation of mathematical techniques and physical basic knowledge in order to prepare the post graduate students of the subjects of physical geodesy, environmental physics and the visiting

References

SHOWING 1-5 OF 5 REFERENCES

GaN Power Transistors on Si Substrates for Switching Applications

TLDR
A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance and a high breakdown voltage as well as one of the cost-effective solutions.

Simulation and analysis of low-resistance AlGaN/GaN HFET power switches

AlGaN/GaN HFETs yield excellent properties for highly-efficient power-switching devices. A key parameter of highly-efficient switches is the static on-state resistance of the transistor. This paper

The Fractal Geometry of Nature

GaN-Based Power Transistors for Future Power Electronic Converters

Gallium Nitride (GaN) is increasingly considered a viable semiconductor material in future power electronic converters. The benefical properties of GaN, being the result of its wide bandgap and the

AlGaN / GaN HEMTs for high voltage applications ”

  • 2005