Four-Terminal FinFET Device Technology

@article{Masahara2007FourTerminalFD,
  title={Four-Terminal FinFET Device Technology},
  author={Meishoku Masahara and Kazuhiko Endo and Y. X. Liu and Shin-ichi O'Uchi and Takashi Matsukawa and Radu Surdeanu and Liesbeth Witters and Gerben Doornbos and V. Nguyen and Geert Van den bosch and C. Vrancken and M. Jurczak and S. Biesemans and Eiichi Suzuki},
  journal={2007 IEEE International Conference on Integrated Circuit Design and Technology},
  year={2007},
  pages={1-4}
}
One of the biggest challenges for the VLSI circuits with 32-nm-technology nodes and beyond is to overcome the issue of catastrophic increases in power consumption due to short-channel effects (SCEs). Fortunately, "independent" double-gate (DG) FinFETs (named "4-terminal-FinFET" because of its four terminals; source, drain, gate 1 and gate 2) have a promising potential to overcome this issue thanks to a post-fabrication flexible Vth controllability in addition to their superior SCE immunity… CONTINUE READING

From This Paper

Figures, tables, results, connections, and topics extracted from this paper.
5 Extracted Citations
9 Extracted References
Similar Papers

Referenced Papers

Publications referenced by this paper.
Showing 1-9 of 9 references

Similar Papers

Loading similar papers…