Foundation of rf CMOS and SiGe BiCMOS technologies

  title={Foundation of rf CMOS and SiGe BiCMOS technologies},
  author={James S. Dunn and David C. Ahlgren and Douglas D. Coolbaugh and Natalie B. Feilchenfeld and Gregory Freeman and David R. Greenberg and Robert A. Groves and Fernando J. Guar{\'i}n and Youssef Hammad and Alvin J. Joseph and Louis D. Lanzerotti and Stephen A. St. Onge and Bradley A. Orner and Jae-Sung Rieh and Kenneth J. Stein and Steven H. Voldman and Ping-Chuan Wang and Michael J. Zierak and Seshadri Subbanna and David L. Harame and Dean A. Herman and Bernard S. Meyerson},
  journal={IBM Journal of Research and Development},
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared… CONTINUE READING
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