Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

@article{Wu2015ForwardBG,
  title={Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors},
  author={Tian-Li Wu and Denis Marcon and Shuzhen You and Niels Posthuma and Benoit Bakeroot and Steve Stoffels and Marleen Van Hove and Guido Groeseneken and Stefaan Decoutere},
  journal={IEEE Electron Device Letters},
  year={2015},
  volume={36},
  pages={1001-1003}
}
In this letter, we studied the forward bias gate breakdown mechanism on enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our knowledge, it is the first time that the temperature dependence of the forward gate breakdown has been characterized. We report for the first time on the observation of a positive temperature dependence, i.e., a higher temperature leads to a higher gate breakdown voltage. Such unexpected behavior is explained by avalanche breakdown… CONTINUE READING
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