Formation of nanometer-scale grooves in silicon with a scanning tunneling microscope.

@article{Kobayashi1993FormationON,
  title={Formation of nanometer-scale grooves in silicon with a scanning tunneling microscope.},
  author={A. Kobayashi and Francois Grey and R. Stanley Williams and Masakazu Aono},
  journal={Science},
  year={1993},
  volume={259 5102},
  pages={1724-6}
}
Grooves a few nanometers wide can be formed on a Si(111) surface with a scanning tunneling microscope when the tip is above a critical voltage. This may provide a promising approach to nanodevice fabrication. The dependence of the critical voltage on tunneling current, tip polarity, and tip material was studied with silver, gold, platinum, and tungsten tips. The results are consistent with field emission of positive and negative silicon ions. The variation of critical voltage with current is… CONTINUE READING

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