Formation of a quasi-two-dimensional electron gas in GaN / Al x Ga 1 x N heterostructures with diffuse interfaces

Abstract

Calculations of the electronic energy levels and the distribution of the quasi-two-dimensional electron gas ͑Q2DEG͒ at the GaN/Al x Ga 1Ϫx N interface that take into account the graded nature of the interface are presented in this article. Mapping of the interface using scanning transmission electron microscopy annular dark-field imaging, the changes in the… (More)

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