Formation of Irregular Al Islands by Room-Temperature Deposition on NiAl(110)

Abstract

STM studies reveal that irregular non-equilibrium two-dimensional AI islands form during deposition of AI on NiAI(IIO) at 300 K. These structures reflect the multiple adsorption sites and diffusion paths available for AI adatoms on the binary alloy surface, as well as the details of inhibited edge diffusion and detachment-attachment kinetics of AI adatoms for numerous distinct step edge configurations. We attempt to capture these features by multi-site lattice-gas modeling incorporating DFT energetics for adatoms both at adsorption sites and transition states. This formulation enables description and elucidation of the observed island growth shapes.

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Cite this paper

@inproceedings{Jing2016FormationOI, title={Formation of Irregular Al Islands by Room-Temperature Deposition on NiAl(110)}, author={Dapeng Jing and Yong Han and B. Sayrac {\"{U}nal and James W. Evans and Patricia A Thiel}, year={2016} }