Formation of CuxMo6S8−y thin film on an MoS2 substrate by a chemical transport technique

@inproceedings{Hinode1985FormationOC,
  title={Formation of CuxMo6S8−y thin film on an MoS2 substrate by a chemical transport technique},
  author={Hirofumi Hinode and Satoshi Ibaraki-shi Yamamoto and Masataka Wakihara and Masao Taniguchi},
  year={1985}
}
Abstract Thin films of Cu x Mo 6 S 8−y were produced by transport of a gaseous copper compound onto an MoS 2 substrate by using a chemical transport technique. The films with thichness of about 10 to 30 μm were always grown on the substrate, and it was found that the thickness of the film may be estimated by that of the initial MoS 2 substrate. The micro-structure of the films was investigated by using both the x-ray diffraction and the scanning electron microscope techniques. It was found that… CONTINUE READING

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