Formation of (Ga,Mn)N Dilute Magnetic Semiconductor by Manganese Ion Implantation


Un-doped GaN film of thickness 1.90 μm, grown on sapphire substrate were uniformly implanted with 325 keV Mn ions for various fluences varying from 1.75 x 10 2.0 x 10 ions cm at 350 C substrate temperature. The structural, morphological and magnetic properties of Mn ion implanted gallium nitride samples were studied using XRD, AFM and SQUID techniques. XRD… (More)


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