Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy.

Abstract

This work provides experimental evidence and theoretical explanations regarding the formation mechanisms of GaN nanowires grown by selective area growth on GaN-on-sapphire templates. The first growth stage, driven by selective area growth kinetics, consists of initial nucleation (along the nanohole inner periphery), coalescence onset and full coalescence, producing a single nanocrystal within each nanohole. In the second growth stage, driven by free-surface-energy minimization, the formed nanocrystal undergoes morphological evolution, exhibiting initial cylindrical-like shape, intermediate dodecagonal shape and a final, thermodynamically stable hexagonal shape. From this point on, the nanowire vertical growth proceeds while keeping the stable hexagonal form.

DOI: 10.1021/nl504099s

Cite this paper

@article{Gaevi2015FormationMO, title={Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy.}, author={Žarko Ga{\vc}evi{\'c} and Daniel G{\'o}mez S{\'a}nchez and E. Calleja}, journal={Nano letters}, year={2015}, volume={15 2}, pages={1117-21} }