Focused ion beam iodine-enhanced etching of high aspect ratio holes in InP photonic crystals

  title={Focused ion beam iodine-enhanced etching of high aspect ratio holes in InP photonic crystals},
  author={Victor Callegari and Philipp M. Nellen and James Kaufmann and Patrick Strasser and Franck Robin and Urs Sennhauser},
  journal={Journal of Vacuum Science \& Technology B},
The authors investigate the focused ion beam (FIB) fabrication of photonic crystal (PhC) holes in InP combining physical sputtering using 30 keV gallium ions and iodine-enhanced etching at 150 °C with a protective platinum or tungsten layer. The authors show that it is equivalent to conventional dry-etching methods such as inductively coupled plasma reactive ion etching in terms of achievable aspect ratio (>10), surface roughness (12.6 nm rms), and stoichiometry. The protective layers can be… 
  • F. Ay
  • Materials Science
    Anadolu University Journal of Science and Technology-A Applied Sciences and Engineering
  • 2018
Use of focused ion beam (FIB) as a nanostructuring platform for fast prototype device development in the area of photonics has been attracting a considerable interest. In this study, we report a
Processing of photonic crystals in InP membranes by focused ion beam milling and plasma etching
We present a fabrication approach for photonic crystals and similar nanophotonic structures in InP using focused ion beam milling and plasma etching. The high quality of ion milling lithography in a
HBr-based inductively coupled plasma etching of high aspect ratio nanoscale trenches in GaInAsP∕InP
The authors report inductively coupled plasma (ICP) dry etching of nanoscale trenches with feature sizes of approximately 140nm wide by 20μm long by 3μm deep in InP with and without quantum wells,
HBr based inductively coupled plasma etching of high aspect ratio nanoscale trenches in InP: Considerations for photonic applications
Pure HBr based inductively coupled plasma vertical, anisotropic etching provides high aspect ratio (20–40) nanoscale trenches in InP at 165°C processing temperatures. Since these temperatures are
Laser-Assisted Focused He+ Ion Beam Induced Etching with and without XeF2 Gas Assist.
These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.
Gas-assisted focused electron beam and ion beam processing and fabrication
Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a
Review Article: Advanced nanoscale patterning and material synthesis with gas field helium and neon ion beams
Focused ion beam nanoscale synthesis has emerged as a critical tool for selected area nanofabrication. Helium and neon ion beams from the gas field ion source have recently demonstrated unparalleled
The out of beam sight effects in focused ion beam processing.
We report that during focused ion beam chemical vapor deposition (FIB-CVD) the effect of deposition is not limited to the area where the ion beam scanning takes place but occurs on regions which are
Analysis of the propagation losses of InP/InGaAsP trench waveguides fabricated by focused ion beam
Focused ion beam was used to fabricate 2mm-long, [email protected] and [email protected] multimode trench waveguides in InP/InGaAsP. An automated stitching method was developed to fabricate mm-long
Silica coating of polymer nanowires produced via nanoimprint lithography from femtosecond laser machined templates.
Field emission scanning electron microscopy, focused ion beam sectioning, energy dispersive x-ray analysis and Fourier-transform infrared spectroscopy were used to characterize the silica nanoneedles.


Surface chemistry and optimization of focused ion beam iodine-enhanced etching of indium phosphide
Abstract Focused ion beam physical sputtering and iodine-enhanced etching of indium phosphide (InP) were performed. Up to 15× enhanced etching rates over sputtering were measured at room temperature,
Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP/InGaAsP
The authors report on the fabrication of photonic crystals in the InP∕InGaAsP∕InP material system for applications at telecommunication wavelengths. To achieve low optical loss, the photonic crystal
Focused ion beam modifications of indium phosphide photonic crystals
This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical
Parametric reactive ion etching of InP using Cl2 and CH4 gases: Effects of H2 and Ar addition
The etching characteristics of InP by reactive ion etching (RIE) using Cl2 and CH4 gases were investigated systematically as functions of various etching parameters. The etching parameters, such as
Damage production in semiconductor materials by a focused Ga + ion beam
The semiconductor materials Si, SiC, GaP, InP, GaAs, and InAs were irradiated at normal incidence and room temperature with a focused Ga+ ion beam in order to investigate the damage production at
Damage in III–V Compounds during Focused Ion Beam Milling
The damage layers generated in III–V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage
Ion bombardment induced compositional changes in GaP and InP surfaces
Abstract This paper describes an experimental study of the effects of low energy ion bombardment on GaP (1 1 1) and InP (1 0 0) single crystal surfaces using X-ray photoelectron spectroscopy (XPS)
Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low‐energy Ar+ ions
The sputtering yield of Si when bombarded with a flux φAr+ of low‐energy Ar+ ions may be enhanced a few times when the Si surface is exposed simultaneously to Cl2 fluxes φCl2 about one order of
Optical study of two-dimensional InP-based photonic crystals by internal light source technique
We present the first optical study of 2-D photonic crystals (PCs) deeply etched in an InP/GaInAsP step-index waveguide. Following the same internal light source approach proposed by Labilloy et al.
Photonic Crystals: Molding the Flow of Light
Since it was first published in 1995, Photonic Crystals has remained the definitive text for both undergraduates and researchers on photonic band-gap materials and their use in controlling the