Focused ion beam iodine-enhanced etching of high aspect ratio holes in InP photonic crystals

@article{Callegari2007FocusedIB,
  title={Focused ion beam iodine-enhanced etching of high aspect ratio holes in InP photonic crystals},
  author={Victor Callegari and Philipp M. Nellen and James Kaufmann and Patrick Strasser and Franck Robin and Urs Sennhauser},
  journal={Journal of Vacuum Science \& Technology B},
  year={2007},
  volume={25},
  pages={2175-2179}
}
The authors investigate the focused ion beam (FIB) fabrication of photonic crystal (PhC) holes in InP combining physical sputtering using 30 keV gallium ions and iodine-enhanced etching at 150 °C with a protective platinum or tungsten layer. The authors show that it is equivalent to conventional dry-etching methods such as inductively coupled plasma reactive ion etching in terms of achievable aspect ratio (>10), surface roughness (12.6 nm rms), and stoichiometry. The protective layers can be… 
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