Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

@article{Qian2014FluorinatedIT,
  title={Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric},
  author={L. X. Qian and Peter To Lai},
  journal={IEEE Electron Device Letters},
  year={2014},
  volume={35},
  pages={363-365}
}
Fluorinated amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been studied by treating InGaZnO film in a CHF3/O2 plasma. The saturation carrier mobility can be improved from 29.6 cm2/V·s to as high as 39.8 cm2/V·s. In addition, the passivation effect of the fluorination on the dominant donor-like traps at the InGaZnO/HfLaO interface is observed, as reflected by suppression of hysteresis phenomenon and smaller subthreshold swing. Measurement result of low-frequency noise… CONTINUE READING
Highly Cited
This paper has 17 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 14 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 17 references

Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors

  • K. H. Choi, H. K. Kim
  • Appl. Phys. Lett., vol. 102, pp. 052103-1–052103…
  • 2013
1 Excerpt

Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

  • J. Raja, K. Jang, N. Balaji
  • Appl. Phys. Lett., vol. 102, pp. 083505-1–083505…
  • 2013
1 Excerpt

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

  • J. S. Park, W. J. Maeng, H. S. Kim
  • Thin Solidi Films, vol. 520, no. 6, pp. 1679–1693…
  • 2012
1 Excerpt

Similar Papers

Loading similar papers…