Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body Potentials

Abstract

A compact terminal current/charge model for partially/dynamically/fully depleted (PD)/(DD)/(FD) double-gate (DG) and silicon-on-insulator (SOI) MOSFETs with floating-body (FB) effect based on unified regional modeling of the surface and body potentials is presented. The model accurately describes the physical behavior of the impact-ionization current that… (More)

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