Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

@inproceedings{Li2017FlexibleMD,
  title={Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE},
  author={Xin Li and Matthew B. Jordan and Taha Ayari and Suresh Sundaram and Youssef El Gmili and Saiful Alam and Muhbub Alam and Gilles Patriarche and Paul L. Voss and Jean Paul Salvestrini and Abdallah Ougazzaden},
  booktitle={Scientific Reports},
  year={2017}
}
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-10 of 31 references

Review—Hexagonal Boron Nitride Epilayers: Growth, Optical Properties and Device Applications

  • H. X. Jiang, J. Y. Lin
  • ECS J. Solid State Sci. Technol. 6, Q3012–Q3021,
  • 2017

Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy

  • X Li
  • Cryst. Growth Des
  • 2016

Vertical metal-semiconductor-metal deep UV photodetectors based on hexagonal boron nitride nanosheets prepared by laser plasma deposition

  • A. F. Zhou, A. Aldalbahi, P. Feng
  • Opt. Mater. Express
  • 2016

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

  • T Ayari
  • Appl. Phys. Lett. 108, 171106,
  • 2016

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