Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.

Abstract

Atomically thin molybdenum disulfide (MoS2) is a promising two-dimensional semiconductor for high-performance flexible electronics, sensors, transducers, and energy conversion. Here, piezoresistive strain sensing with flexible MoS2 field-effect transistors (FETs) made from highly uniform large-area films is demonstrated. The origin of the piezoresistivity… (More)
DOI: 10.1021/acsami.5b02336

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Cite this paper

@article{Tsai2015FlexibleMF, title={Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.}, author={Meng-Yen Tsai and Alexey A Tarasov and Z. R. Hesabi and Hossein Taghinejad and Philip M. Campbell and Corey A. Joiner and Ali Adibi and Eric M. Vogel}, journal={ACS applied materials & interfaces}, year={2015}, volume={7 23}, pages={12850-5} }