Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride.

  title={Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride.},
  author={Nicholas Petrone and Tarun Chari and Inanc Meric and Lei Wang and Kenneth L. Shepard and James C. Hone},
  journal={ACS nano},
  volume={9 9},
Flexible graphene field-effect transistors (GFETs) are fabricated with graphene channels fully encapsulated in hexagonal boron nitride (hBN) implementing a self-aligned fabrication scheme. Flexible GFETs fabricated with channel lengths of 2 μm demonstrate exceptional room-temperature carrier mobility (μFE = 10 000 cm(2) V(-1) s(-1)), strong current saturation characteristics (peak output resistance, r0 = 2000 Ω), and high mechanical flexibility (strain limits of 1%). These values of μFE and r0… CONTINUE READING
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Encapsulated Graphene Field-Effect Transistors for Air Stable Operation

K. Alexandrou, N. Petrone, J. Hone, I. Kymissis
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