First principles studies of point defects in HfO2 and Si-HfO2 interfaces

Abstract

In the last four decades the semiconductor industry has seen the success of continuously improving the performance of integrated circuits. Behind this success is the miniaturization of the Si-based transistors through down scaling the thickness of the SiO2 gate dielectric layer. As the SiO2 layer is approaching the atomic scale limit (∼1 nm), it needs to be… (More)

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